A reliable and accurate approach to assess NBTI behavior of state-of-the-art pMOSFETs with fast-WLR

NBTI is a key challenge of today's technologies and could be assessed so far only by relative long stress durations. The On-the-fly characterization seems to be a proper method for fast-WLR, but shows also some problems. This work describes for the first time the application of OTF in combination with self-heating test structures and a method to correct the initial value without special equipment. Challenges and different solutions are introduced and discussed. We compare data from very fast non standard measurements with fWLR data acquired with regular test equipment. The insight we gained suggests that fWLR provides a suitable means for fast NBTI monitoring.