T. Hasegawa, Yoshiki Yamamoto, H. Makiyama, H. Shinkawata, S. Kamohara, Y. Yamaguchi
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SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive
Ultra low power performance is indispensable for Micro Controller Unit (MCU) used as wireless sensor and communication nodes which needs battery maintenance free and energy harvesting operation in the Internet of things (IoT) era. The Silicon on Thin Buried Oxide (SOTB) is one of the most suitable CMOS technology for ultra low power MCU because of its small variability and back bias controllability. This paper describes the mechanism of ultra low power performance of SOTB, performance demonstration of transistor, SRAM and MCU test chip, and what SOTB will realize for IoT and Automotive. SOTB will have less than 1/10 of power efficiency by low leakage current at standby mode and low current consumption at operation mode which today's technology cannot realize.
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