具有阶梯通道掺杂结构的动态阈值电压SOI MOSFET

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869834

Jun Xu, M. Cheng

{"title":"具有阶梯通道掺杂结构的动态阈值电压SOI MOSFET","authors":"Jun Xu, M. Cheng","doi":"10.1109/ICCDCS.2000.869834","DOIUrl":null,"url":null,"abstract":"A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET's is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A dynamic threshold-voltage SOI MOSFET with a stepped channel doping profile\",\"authors\":\"Jun Xu, M. Cheng\",\"doi\":\"10.1109/ICCDCS.2000.869834\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET's is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869834\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种具有阶梯通道掺杂(SCD)结构的动态阈值电压SOI MOS结构。利用二维器件仿真技术系统地研究了SCD分布对深亚微米动态阈值SOI MOSFET性能的影响。研究发现，SCD结构与动态阈值SOI MOS结构相结合，不仅有效抑制了短信道效应，而且大大提高了器件的驱动能力。此外，SCD器件中的高掺杂体大大降低了正向偏置体电流和源漏穿通电流。

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A dynamic threshold-voltage SOI MOSFET with a stepped channel doping profile

A novel dynamic threshold voltage SOI MOS structure with a stepped-channel-doping (SCD) profile is proposed. The influence of the SCD profile on performance of deep-submicron dynamic threshold SOI MOSFET's is studied systematically using two-dimensional device simulation. It is discovered that the SCD configuration combined with the dynamic threshold SOI MOS structure not only effectively suppresses short-channel effects, but also greatly enhances the device driving capability. Moreover, the heavily doped body in the SCD device substantially reduces the forward-biased body current and source-drain punch-through current.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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