P+-Ge1−xSnx / P−-Ge1−x−ySixSny / n-Ge1−x−ySixSny NTFET分析及n-Ge1−x−ySixSny欧姆接触的实现

2016 16th International Workshop on Junction Technology (IWJT) Pub Date : 2016-05-09 DOI:10.1109/IWJT.2016.7486667

Suyuan Wang, Jun Zheng, C. Xue, Chuanbo Li, Y. Zuo, B. Cheng, Qiming Wang

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引用次数: 0

摘要

本文采用溅射外延法制备了Sb原位掺杂技术，成功地生长了n-Ge1-x-ySixSny三元合金。通过浅埋P实现与n-Ge1-x-ySixSny的欧姆接触。提出并模拟了一类异质结构p+-Ge1-xSnx / p—Ge1-x-ySixSny / n-Ge1-x-ySixSny n沟道隧道场效应晶体管(NTFET)。Ge1-xSnx的窄带隙增加了Γ谷处的带间隧道(BTBT)隧穿概率，从而导致更高的导通电流。n-Ge1-x-ySixSny被用作漏极，因为它具有较大的间接带隙，从而减少了NTFET中的双极性行为。

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P+-Ge1−xSnx / p−-Ge1−x−ySixSny / n-Ge1−x−ySixSny NTFET analysis and the realization of n-Ge1−x−ySixSny ohmic contact

In this paper, n-Ge1-x-ySixSny ternary alloy was successfully grown by using the Sb in situ doping technique through sputter epitaxy method. Ohmic contacts to n-Ge1-x-ySixSny are realized by shallow P implant. Group IV heterostructure p⁺-Ge_1-xSn_x / p^--Ge_1-x-ySi_xSn_y / n-Ge_1-x-ySi_xSn_y N-channel tunneling field-effect transistor (NTFET) is proposed and simulated. The narrow bandgap of Ge_1-xSn_x increases the band-to-band-tunneling (BTBT) tunneling probability at Γ valley, which leads to a higher on-state current. The n-Ge_1-x-ySi_xSn_y is used as drain since it exhibits a large indirect bandgap, which reduces the ambipolar behavior in NTFET.

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来源期刊

2016 16th International Workshop on Junction Technology (IWJT)

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