掺杂剂对多晶硅栅极HfO/sub / MOSFET的渗透效应

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934984

K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. Jeon, C. Kang, B. Lee, R. Nieh, J.C. Lee

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引用次数: 29

摘要

首次定量研究了掺杂剂渗透对多晶硅栅HfO/sub - 2/栅介电mosfet电学特性的影响。在高温掺杂激活下观察到明显的硼渗透，这不仅降低了平面带电压(V/sub fb/)，而且降低了通道载流子的迁移率。HfO/sub /沉积前的表面氮化可以抑制硼的渗透，同时降低等效氧化厚度(EOT)。

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Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's

Effect of dopant penetration on electrical characteristics of polysilicon gate HfO/sub 2/ gate dielectric MOSFETs has been studied quantitatively for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V/sub fb/) but channel carrier mobility. Surface nitridation prior to HfO/sub 2/ deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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