超过50 GHz的片上系统设计

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) Pub Date : 2005-07-20 DOI:10.1109/IWSOC.2005.103

S. Voinigescu, M. Gordon, Chihou Lee, T. Yao, A. Mangan, K. Yau

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引用次数: 2

摘要

讨论了毫米波IC构建模块(如lna，混频器，vco和功率放大器)的候选拓扑和设计方法，并介绍了最近在SiGe BiCMOS和90纳米RF CMOS技术中使用50 GHz以上电感器和变压器获得的实验结果。

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System-on-chip design beyond 50 GHz

Candidate topologies and design methodologies for millimeter-wave IC building blocks such as LNAs, mixers, VCOs, and power amplifiers are discussed and recent experimental results obtained in SiGe BiCMOS and 90-nm RF CMOS technologies using inductors and transformers above 50 GHz are presented.

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来源期刊

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)

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