模拟半导体材料中剂量率效应的激光辐射研究

2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT) Pub Date : 2016-08-01 DOI:10.1109/ICEICT.2016.7879762

Li Mo, Sun Peng, Zhang Jian, Li Jie, Qiao Chunhua, Li Linzhe, X. Li-yi

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引用次数: 0

摘要

本文建立了基于TCAD的激光辐射模型。利用该模型，对激光辐照半导体材料进行了模拟。并给出了伽玛射线辐照半导体材料的模拟。通过对仿真结果的比较，得到了激光强度与伽马剂量率之间的关系。结果表明，激光辐射模型在TCAD中进行可靠性分析是可行的，激光仿真技术模拟剂量率效应是可靠的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Research on laser radiation for simulating dose rate effects in semiconductor materials

In this paper, a laser radiation model based on TCAD is built up. With this model, some simulations of laser irradiating semiconductor material are presented. And also simulations of gamma ray irradiating semiconductor material are given. By comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained. The results demonstrate that the laser radiation model is practicable in TCAD for reliability analysis and the laser simulation technique is reliable to simulate dose rate effect.

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2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT)

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