用于近红外光谱的高灵敏度可调逆变级联码跨阻放大器

2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC) Pub Date : 2016-07-25 DOI:10.1109/JEC-ECC.2016.7518977

A. Atef, M. Atef, M. Abbas, E. Khaled

{"title":"用于近红外光谱的高灵敏度可调逆变级联码跨阻放大器","authors":"A. Atef, M. Atef, M. Abbas, E. Khaled","doi":"10.1109/JEC-ECC.2016.7518977","DOIUrl":null,"url":null,"abstract":"This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dBΩ transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dBΩ gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.","PeriodicalId":362288,"journal":{"name":"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy\",\"authors\":\"A. Atef, M. Atef, M. Abbas, E. Khaled\",\"doi\":\"10.1109/JEC-ECC.2016.7518977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dBΩ transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dBΩ gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.\",\"PeriodicalId\":362288,\"journal\":{\"name\":\"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JEC-ECC.2016.7518977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JEC-ECC.2016.7518977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文介绍了一种用于频域近红外光谱(FD-NIRS)的高灵敏度低功率跨阻放大器(TIA)的设计和后期布局仿真。在1.2 V直流电源下，TIA功耗为340 μW。这种低功耗对于近红外光谱设备的便携性是必要的。所提出的TIA在片外光电二极管电容为2 pF的情况下实现104.8 dBΩ的跨阻增益、50 MHz的带宽和15.1 nArms的总集成输入噪声电流。所演示的TIA采用130 nm CMOS技术进行模拟，占地面积为0.0012 mm2。为了提高总增益，设计了后置放大级。完整的NIRS光接收机增益为119.5 dBΩ，带宽为49.2 MHz，总集成输入噪声电流为15.4 nArms，在1.2 V直流电源下功耗为400 μW。

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High-sensitivity regulated inverter cascode transimpedance amplifier for near infrared spectroscopy

This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 μW from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dBΩ transimpedance gain, 50 MHz bandwidth and 15.1 nArms total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm2. Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dBΩ gain, 49.2 MHz bandwidth, 15.4 nArms total integrated input noise current and consumes 400 μW from a 1.2 V DC supply.

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来源期刊

2016 Fourth International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC)

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