3D- maps:具有堆叠内存的3D大规模并行处理器

Daehyun Kim, K. Athikulwongse, Michael B. Healy, Mohammad M. Hossain, Moongon Jung, Ilya Khorosh, G. Kumar, Young-Joon Lee, D. L. Lewis, Tzu-Wei Lin, Chang Liu, Shreepad Panth, M. Pathak, Minzhen Ren, Guanhao Shen, Taigon Song, Dong Hyuk Woo, Xin Zhao, Joungho Kim, Ho Choi, G. Loh, H. Lee, S. Lim
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引用次数: 176

摘要

最近的几项工作已经证明了基于通硅通孔(TSV)的3D集成的好处,但它们都不涉及功能齐全的多核处理器和内存堆叠。3D- maps (3D massive Parallel Processor with Stacked Memory)是一种双层3D IC,其中逻辑芯片由64个通用处理器内核组成,运行频率为277MHz,内存芯片包含256KB SRAM。制造采用130nm GlobalFoundries器件技术和Tezzaron TSV和键合技术完成。包装是由Amkor完成的。该处理器包含33M晶体管,50K tsv和50K面对面连接,占地面积为5x5mm2。该芯片工作电压为1.5V,功耗高达4W,功率密度为16W/cm2。核心架构从头开始开发,以受益于对SRAM的单周期访问。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
3D-MAPS: 3D Massively parallel processor with stacked memory
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration, but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM. Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5x5mm2 footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm2 power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.
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