{"title":"GaN器件的仿真框架,特别提到了可靠性问题","authors":"Sushanta Bordoloi, Ashok Ray, G. Trivedi","doi":"10.1049/pbcs073g_ch4","DOIUrl":null,"url":null,"abstract":"In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.","PeriodicalId":417544,"journal":{"name":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation framework for GaN devices with special mention to reliability concern\",\"authors\":\"Sushanta Bordoloi, Ashok Ray, G. Trivedi\",\"doi\":\"10.1049/pbcs073g_ch4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.\",\"PeriodicalId\":417544,\"journal\":{\"name\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/pbcs073g_ch4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs073g_ch4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation framework for GaN devices with special mention to reliability concern
In this chapter, we will look into some of the reliability concern in first few sections and fi nally propose a simulation (numerical) framework along with model development to understand these effects.