{"title":"SMPS高频变压器的增强模型","authors":"I. Maio, Patrizia Savi, I. Stievano, F. Canavero","doi":"10.1109/EMCZUR.2009.4783421","DOIUrl":null,"url":null,"abstract":"The modeling of high-frequency transformers via augmented equivalent circuits is addressed. The augmented models are composed of a low-frequency equivalent and a supplemental element modeled via real rational fitting. They offer both high accuracy levels and a physical meaning that helps the interpretation of simulation results. Parasitics effects between the windings and between the windings and the carrying board can be also included. The use of an augmented model for the simulation of a dc-dc converter is demonstrated.","PeriodicalId":192851,"journal":{"name":"2009 20th International Zurich Symposium on Electromagnetic Compatibility","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Augmented models of High-Frequency Transformers for SMPS\",\"authors\":\"I. Maio, Patrizia Savi, I. Stievano, F. Canavero\",\"doi\":\"10.1109/EMCZUR.2009.4783421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modeling of high-frequency transformers via augmented equivalent circuits is addressed. The augmented models are composed of a low-frequency equivalent and a supplemental element modeled via real rational fitting. They offer both high accuracy levels and a physical meaning that helps the interpretation of simulation results. Parasitics effects between the windings and between the windings and the carrying board can be also included. The use of an augmented model for the simulation of a dc-dc converter is demonstrated.\",\"PeriodicalId\":192851,\"journal\":{\"name\":\"2009 20th International Zurich Symposium on Electromagnetic Compatibility\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-02-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 20th International Zurich Symposium on Electromagnetic Compatibility\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCZUR.2009.4783421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 20th International Zurich Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCZUR.2009.4783421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Augmented models of High-Frequency Transformers for SMPS
The modeling of high-frequency transformers via augmented equivalent circuits is addressed. The augmented models are composed of a low-frequency equivalent and a supplemental element modeled via real rational fitting. They offer both high accuracy levels and a physical meaning that helps the interpretation of simulation results. Parasitics effects between the windings and between the windings and the carrying board can be also included. The use of an augmented model for the simulation of a dc-dc converter is demonstrated.
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