具有增强驱动电流、减少短通道效应和浮体效应的新型垂直pMOSFET的制造

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934943

Q. Ouyang, Xiangdong Chen, A. Tasch, L. Register, S. Banerjee, J. Chu, J. Ott

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引用次数: 2

摘要

我们首次制造了一种新型的垂直p沟道金属氧化物半导体场效应晶体管(MOSFET)，也称为高迁移率异质结晶体管(HMHJT)。显著降低了短通道效应和浮体效应，增强了驱动电流。与硅控制器件相比，制备的p-HMHJT具有1.65/spl倍/高的驱动电流(V/sub DS/=-1.6 V和V/sub G/-V/sub T/=-2 V)和70/spl倍/低的断开状态泄漏(V/sub DS/=-1.6 V)。

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Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects

We have fabricated, for the first time, a novel vertical p-channel metal-oxide-semiconductor field-effect transistor (MOSFET), also called the high mobility hetero-junction transistor (HMHJT). Significantly reduced short channel effects and floating body effects, and enhanced drive current have been achieved. Compared to a Si control device, the fabricated p-HMHJT has a 1.65/spl times/ higher drive current (V/sub DS/=-1.6 V and V/sub G/-V/sub T/=-2 V), and a 70/spl times/ lower off-state leakage (V/sub DS/=-1.6 V).

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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