Dong-Won Kim, K. Yeo, S. Suk, Ming Li, Y. Yeoh, D. Sohn, C. Chung
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Fabrication and electrical characteristics of self-aligned (SA) gate-all-around (GAA) si nanowire MOSFETs (SNWFET)
We have proposed gate-all-around Silicon nanowire MOSFET (SNWFET) on bulk Si as an ultimate transistor. Well controlled processes are used to achieve gate length (LG) of sub-10nm and narrow nanowire widths. Excellent performance with reasonable VTH and short channel immunity are achieved owing to thin nanowire channel, self-aligned gate, and GAA structure. Transistor performance with gate length of 10nm has been demonstrated and nanowire size (DNW) dependency of various electrical characteristics has been investigated. Random telegraph noise (RTN) in SNWFET is studied as well.
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