igbt和mct的非破坏性RBSOA特性

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting Pub Date : 1991-09-28 DOI:10.1109/IAS.1991.178066

D. Chen, F. Lee, G. Carpenter

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引用次数: 24

摘要

讨论了绝缘栅双极晶体管(igbt)和mos控制器晶闸管(mct)的无损评估，并建立了相应的rbsoa。给出了不同温度下各种商用设备的测试结果。我们观察到，与双极结晶体管相比，igbt和mct表现出非常不同的关断击穿特性。寄生晶体管的雪崩击穿是导致igbt和mct动态电压阻断能力丧失的原因

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nondestructive RBSOA characterization of IGBTs and MCTs

Nondestructive evaluations of IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controller thyristors) are discussed and their corresponding RBSOAs established. Test results are presented for a variety of commercial devices at different temperatures. It was observed that, compared to BJTs (bipolar junction transistors), IGBTs and MCTs exhibit very different turn-off breakdown characteristics. Avalanche breakdown of the parasitic transistor accounts for the loss of dynamic voltage blocking capability of both IGBTs and MCTs.<>

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Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting

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