低温下的高速SiGe EAMs

Evan D. Chansky, Thomas P. Dorch, Aaron Maharry, R. Shafiiha, Guomin Yu, A. Zilkie, S. Estrella, L. Coldren, C. Schow
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引用次数: 0

摘要

能够在低温下工作的电光调制器是许多传感、量子和超级计算应用的兴趣所在。硅光子学因其低成本和CMOS兼容性而引人注目,但传统的调谐机制在低温下受到影响。体电吸收调制器很有吸引力,因为只有吸收带边缘的波长随温度变化。低温对高速调制器的影响,在5-300K范围内具有一致的消光比。(抽象)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Speed SiGe EAMs at Cryogenic Temperatures
Electro-optic modulators capable of operating at cryogenic temperatures are of interest to a host of sensing, quantum, and supercomputing applications. Silicon photonics is compelling for its low cost and CMOS compatibility, but conventional tuning mechanisms are impacted at low temperatures. Bulk electro-absorption modulators are appealing since only the wavelength of the absorption band edge varies with temperature. Cryogenic effects on a fabricated high-speed modulator are shown, with consistent extinction ratio from 5-300K. (Abstract)
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