{"title":"InGaAsSb/GaSb的电学和光学性质","authors":"B. Podor, Z. Horváth, V. Rakovics","doi":"10.1109/ISSE.2009.5206952","DOIUrl":null,"url":null,"abstract":"InGaAsSb layers were grown on GaSb substrates by liquid phase epitaxy. The variation of the bandgap with composition was determined and a new value for the bandgap bowing parameter is proposed. Mechanisms of the current conduction process in Au/InGaAsSb Schottky barrier structures were determined as well as the value of the Schottky barrier heights.","PeriodicalId":337429,"journal":{"name":"2009 32nd International Spring Seminar on Electronics Technology","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical and optical properties of InGaAsSb/GaSb\",\"authors\":\"B. Podor, Z. Horváth, V. Rakovics\",\"doi\":\"10.1109/ISSE.2009.5206952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAsSb layers were grown on GaSb substrates by liquid phase epitaxy. The variation of the bandgap with composition was determined and a new value for the bandgap bowing parameter is proposed. Mechanisms of the current conduction process in Au/InGaAsSb Schottky barrier structures were determined as well as the value of the Schottky barrier heights.\",\"PeriodicalId\":337429,\"journal\":{\"name\":\"2009 32nd International Spring Seminar on Electronics Technology\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 32nd International Spring Seminar on Electronics Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSE.2009.5206952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 32nd International Spring Seminar on Electronics Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSE.2009.5206952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical and optical properties of InGaAsSb/GaSb
InGaAsSb layers were grown on GaSb substrates by liquid phase epitaxy. The variation of the bandgap with composition was determined and a new value for the bandgap bowing parameter is proposed. Mechanisms of the current conduction process in Au/InGaAsSb Schottky barrier structures were determined as well as the value of the Schottky barrier heights.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
