Z. Miao, F. Shi, Hongchang Cheng, Shu-fei Wang, Xiao-hui Zhang, Yuan Yuan, Chang Chen
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引用次数: 2
摘要
为了了解活化过程对GaAs光电阴极的影响,采用固定电流的铯源和不同电流的氧源分别活化了3个GaAs样品。活化过程中铯源电流相同,以保证铯量子的初始吸附相似,这是铯与氧交替活化过程中表现出差异的基础。通过对活化数据的分析,表明cs - o电流比为1.07是获得较高灵敏度和较好稳定性的最佳比值。根据双偶极子模型,在GaAs表面形成了稳定均匀的GaAs- o - cs:Cs-O-Cs双偶极子层,并通过铯和氧的活化在GaAs表面实现了负电子亲和。分析结果与模型吻合较好。从而为提高砷化镓光电阴极的灵敏度和稳定性提供了一种有效的技术手段。
Activation processes on GaAs photocathode by different currents of oxygen source
In order to know the influence of activation processes on GaAs photocathodes, three GaAs samples were activated by a fixed current of cesium source and different currents of oxygen source. The current of caesium source is same during activation to ensure initial adsorption of caesium quantum is similar, which is the base to show the difference during alternation activation of caesium and oxygen. Analysed with the activation data, it is indicated that Cs-to-O current ratio of 1.07 is the optimum ratio to obtain higher sensitivity and better stability. According to double dipole model, stable and uniform double dipole layers of GaAs-O-Cs:Cs-O-Cs are formed and negative electron affinity is achieved on GaAs surface by activation with cesium and oxygen. The analytical result is just coincident with the model. Thus there is an efficient technological method to improve sensitivity and stability of GaAs photocathode.