电路应用中LDD mosfet的偏置相关重叠电容的描述

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347303

P. Klein, K. Hoffmann, B. Lemaitre

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引用次数: 15

摘要

提出了一种用于电路应用的LDD(S)结构mosfet偏置相关重叠区域的解析电荷描述。进一步推导了一种间接提取LDD(S)参数的方法。通过对一个基频放大电路的仿真，证明了对LDD mosfet偏置相关重叠电容的错误描述会对仿真结果产生深远的影响。

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Description of the bias dependent overlap capacitance at LDD MOSFETs for circuit applications

An analytical charge description for the bias dependent overlap regions at MOSFETs with LDD(S) configuration for circuit applications is presented. Furthermore an indirect method for the extraction of the LDD(S) parameters is derived. By simulating a fundamental amplifier circuit, it is demonstrated, that an incorrect description of the bias dependent overlap capacitances of LDD MOSFETs can have a profound effect on simulation results.<>

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Proceedings of IEEE International Electron Devices Meeting

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