一种新型亚微米24 V SiGe:C重燃HBT

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240289

J. Melai, P. Magnée, R. Hueting, F. Neuilly, R. de Kort, J. Slotboom

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引用次数: 3

摘要

首次提出了一种SiGe:C异质结双极晶体管(HBT)，该晶体管在给定的集电极结击穿电压(BV/sub CB0/)下，利用复流效应提高截止频率(f/sub T/)。通过在集电极漂移区附近使用充满本征硅的沟槽，可以重塑电场分布，从而使高击穿电压(>20 V)与高漂移掺杂浓度相结合。这允许高电流密度，因此高f/下标T/。实验结果表明，利用resurf可使f/sub - T//spl倍/BV/sub - CB0/ product增大2倍，最大可达670 GHzV。

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A new sub-micron 24 V SiGe:C resurf HBT

For the first time a SiGe:C heterojunction bipolar transistor (HBT) is presented that uses the resurf effect to improve the cutoff frequency (f/sub T/) for a specified collector-base junction breakdown voltage (BV/sub CB0/). By using trenches filled with intrinsic silicon adjacent to the collector drift region, the electric field profile can be reshaped so that a high breakdown voltage (>20 V) can be combined with a high drift doping concentration. This allows for high current densities and consequently a high f/sub T/. Experimental results show an increase of the f/sub T//spl times/BV/sub CB0/ product of up to a factor of two by using resurf, the maximum value obtained is 670 GHzV.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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