共沉淀法合成La1−xEuxVO4粉末的基体温度行为及杂质发射

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912397

S. Nedilko, O. Chukova, S. Nedilko, T. Voitenko, V. Sheludko, O. Gomenyuk

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引用次数: 1

摘要

采用共沉淀法合成了La1-xEuxVO4粉体。研究样品的发光光谱由基体发射的宽非结构带和杂质Eu3+离子内部f-f电子跃迁引起的窄谱线组成。在10 ~ 300 K温度范围内对两种类型的发射进行了研究。利用所提出的矩阵发射模型和Eu3+中心最近周围的结构模型讨论了所得到的依赖关系。

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Temperature behavior of matrix and impurity emission of La1−xEuxVO4 powders synthesized by co-precipitation method

The La_1-xEu_xVO₄ powders were synthesized by co-precipitation method. Luminescence spectra of the investigated samples consist of wide non-structural bands of the matrix emission and narrow spectral lines caused by inner f-f electron transitions in the impurity Eu³⁺ ions. The both types of emission were studied within 10 - 300 K temperature range. Obtained dependencies are discussed using proposed models for matrix emission and structure of the nearest surrounding of the Eu³⁺ centers.

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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