高集成三维微波毫米波射频前端的自适应建模与设计

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049040

E. Tentzeris

{"title":"高集成三维微波毫米波射频前端的自适应建模与设计","authors":"E. Tentzeris","doi":"10.1109/GAAS.2002.1049040","DOIUrl":null,"url":null,"abstract":"The FDTD and the Haar-based MRTD algorithms are applied to the full-wave modeling of highly integrated 3D microwave and millimeter wave radio front-ends that require the optimization of various components as well as the minimization of the crosstalk between them. The numerical results have demonstrated a very good computational efficiency in the calculation of the scattering parameters, the Q-factor, as well as in the estimation of the radiation pattern, of the packaging effects and of the parasitic crosstalk between neighboring geometries.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Adaptive modeling and design of highly integrated 3D microwave-millimeter wave radio front-ends\",\"authors\":\"E. Tentzeris\",\"doi\":\"10.1109/GAAS.2002.1049040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The FDTD and the Haar-based MRTD algorithms are applied to the full-wave modeling of highly integrated 3D microwave and millimeter wave radio front-ends that require the optimization of various components as well as the minimization of the crosstalk between them. The numerical results have demonstrated a very good computational efficiency in the calculation of the scattering parameters, the Q-factor, as well as in the estimation of the radiation pattern, of the packaging effects and of the parasitic crosstalk between neighboring geometries.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

FDTD和基于haar的MRTD算法被应用于高度集成的三维微波和毫米波无线电前端的全波建模，这些建模需要优化各个组件以及最小化它们之间的串扰。数值结果表明，该方法在计算散射参数、q因子、辐射方向图、封装效应和相邻几何之间的寄生串扰等方面具有很好的计算效率。

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Adaptive modeling and design of highly integrated 3D microwave-millimeter wave radio front-ends

The FDTD and the Haar-based MRTD algorithms are applied to the full-wave modeling of highly integrated 3D microwave and millimeter wave radio front-ends that require the optimization of various components as well as the minimization of the crosstalk between them. The numerical results have demonstrated a very good computational efficiency in the calculation of the scattering parameters, the Q-factor, as well as in the estimation of the radiation pattern, of the packaging effects and of the parasitic crosstalk between neighboring geometries.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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