体效应和阈值降压对沟槽MOSFET体二极管特性的影响

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239935

G. Dolny, S. Sapp, A. Elbanhaway, C. F. Wheatley

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引用次数: 33

摘要

本文采用解析建模、二维数值模拟和物理测量等方法，对高通道密度沟槽功率mosfet的体二极管特性进行了全面的研究。结果表明，对于最先进的沟槽mosfet，由于栅极控制的第三象限传导，通道中的大多数载流子对体二极管特性有强烈的影响。这种大的通道电流被证明是由于MOSFET体效应而导致动态阈值电压降低的结果。

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The influence of body effect and threshold voltage reduction on trench MOSFET body diode characteristics

This paper presents a comprehensive study of the body diode characteristics of high-channel density trench power MOSFETs using analytic modeling, 2-dimensional numerical simulation, and physical measurements. The results show that, for state-of-the-art trench MOSFETs, the body diode characteristics are strongly influenced by majority carriers in the channel due to gate-controlled third quadrant conduction. This large channel current is shown to be the result of dynamic threshold voltage lowering due to the MOSFET body effect.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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