{"title":"一个用于测量BTI, HCI和TDDB的高分辨率片上拍频检测系统","authors":"J. Keane, Xiaofei Wang, D. Persaud, C. Kim","doi":"10.1109/ICICDT.2010.5510268","DOIUrl":null,"url":null,"abstract":"We present an on-chip reliability monitor capable of separating the aging effects of Hot Carrier Injection (HCI), Bias Temperature Instability (BTI), and Time Dependent Dielectric Breakdown (TDDB) with high frequency resolution. Sub-µs measurements are controlled by on-chip logic in order to avoid excessive unwanted BTI recovery during stress interruptions. Frequency shift measurement resolution of down to the error floor of 0.07% is achieved during these short interruptions using a beat frequency detection system, and we automate the experiments through a simple digital interface. Measurement results are presented from a 65 nm test chip.","PeriodicalId":187361,"journal":{"name":"2010 IEEE International Conference on Integrated Circuit Design and Technology","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high resolution on-chip beat frequency detection system for measuring BTI, HCI, and TDDB\",\"authors\":\"J. Keane, Xiaofei Wang, D. Persaud, C. Kim\",\"doi\":\"10.1109/ICICDT.2010.5510268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an on-chip reliability monitor capable of separating the aging effects of Hot Carrier Injection (HCI), Bias Temperature Instability (BTI), and Time Dependent Dielectric Breakdown (TDDB) with high frequency resolution. Sub-µs measurements are controlled by on-chip logic in order to avoid excessive unwanted BTI recovery during stress interruptions. Frequency shift measurement resolution of down to the error floor of 0.07% is achieved during these short interruptions using a beat frequency detection system, and we automate the experiments through a simple digital interface. Measurement results are presented from a 65 nm test chip.\",\"PeriodicalId\":187361,\"journal\":{\"name\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2010.5510268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Integrated Circuit Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2010.5510268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high resolution on-chip beat frequency detection system for measuring BTI, HCI, and TDDB
We present an on-chip reliability monitor capable of separating the aging effects of Hot Carrier Injection (HCI), Bias Temperature Instability (BTI), and Time Dependent Dielectric Breakdown (TDDB) with high frequency resolution. Sub-µs measurements are controlled by on-chip logic in order to avoid excessive unwanted BTI recovery during stress interruptions. Frequency shift measurement resolution of down to the error floor of 0.07% is achieved during these short interruptions using a beat frequency detection system, and we automate the experiments through a simple digital interface. Measurement results are presented from a 65 nm test chip.
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