InSb红外焦平面阵列的优化

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316499

N. Guo, Weida Hu, Xiaoshuang Chen, Y. Lv, Xiaoliu Zhang, J. Si, W. Lu

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引用次数: 0

摘要

对中波长InSb红外焦平面阵列的量子效率(QE)进行了数值研究。研究了吸收长度和p区厚度对器件QE的影响。我们的工作表明，p区的最佳厚度在很大程度上取决于InSb的吸收特性。

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Optimization of InSb infrared focal plane arrays

The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.

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2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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