提高InSnZnO薄膜晶体管性能的气相自组装单层

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) Pub Date : 2018-11-01 DOI:10.1109/CAD-TFT.2018.8608102

W. Zhong, Guoyuan Li, Rongsheng Chen

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引用次数: 0

摘要

提出并制备了以自组装单层(SAM)作为钝化层修饰后通道的底栅InSnZnO (ITZO)薄膜晶体管(TFTs)。以三乙氧基辛基硅烷(OTES)为原料，采用气相沉积法制备了SAM。对于具有OTES的SAM，获得了有序的高疏水性单层和ITZO TFT的优异性能。

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Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance

Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.

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2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)

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