二极管辅助准z源断续电流逆变器的分析与仿真

S. Laali, E. Babaei, C. Buccella, Carlo Cecati
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引用次数: 0

摘要

本文提出了二极管辅助准z源逆变器(DAQZSI)的拓扑结构。研究了这种拓扑结构在两单元DAQZSI、三单元DAQZSI和n单元DAQZSI三种状态下的性能。对这些拓扑结构进行了全面分析,得到了升压因数。与传统的z源逆变器相比,该逆变器的最大优点是在不增加使用有源元件数量的情况下具有较高的升压因数值。此外,还计算了所用电容器、二极管和电感的电压和电流方程。最后,利用EMTDC/PSCAD软件对双单元DAQZSI的仿真结果再次验证了分析的正确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Diode Assisted Quasi Z-source Inverter with Discontinuous Current: Analysis and Simulation
In this paper, the developed topology of the diodes assisted quasi Z-source inverter (DAQZSI) is proposed. This topology is investigated in three states of two-cell DAQZSI, three-cell DAQZSI and n-cell DAQZSI. These topologies are completely analyzed and the boost factor are obtained. High value of boost factor without increasing the number of used active elements is the most important advantage of this inverter in comparison with the conventional Z-source inverter. In addition, the voltage and current equations of used capacitors, diodes and inductors are calculated. Finally, the correctness of the presented analyses is reconfirmed by using the simulation results on the two-cell DAQZSI in EMTDC/PSCAD software.
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