用于多千兆传输系统的嵌入式信号整形分布式放大器

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493708

A. Borjak, P. Monteiro, I. Darwazeh, J. O'Reilly

{"title":"用于多千兆传输系统的嵌入式信号整形分布式放大器","authors":"A. Borjak, P. Monteiro, I. Darwazeh, J. O'Reilly","doi":"10.1109/EDMO.1995.493708","DOIUrl":null,"url":null,"abstract":"This paper discusses the use of distributed amplifiers as transversal filters for high bit rate pulse shaping/filtering applications. Two schemes demonstrating a general approach, obtained by optimising one or more transversal filter parameters are explored. Simulation results, based on the parameters of a commercially available 40 GHz HEMT foundry process, are presented to illustrate the practicability of the different schemes.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distributed amplifiers with embedded signal shaping for multigigabit transmission systems\",\"authors\":\"A. Borjak, P. Monteiro, I. Darwazeh, J. O'Reilly\",\"doi\":\"10.1109/EDMO.1995.493708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the use of distributed amplifiers as transversal filters for high bit rate pulse shaping/filtering applications. Two schemes demonstrating a general approach, obtained by optimising one or more transversal filter parameters are explored. Simulation results, based on the parameters of a commercially available 40 GHz HEMT foundry process, are presented to illustrate the practicability of the different schemes.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文讨论了在高比特率脉冲整形/滤波应用中使用分布式放大器作为横向滤波器。通过优化一个或多个横向滤波器参数，探讨了两种证明一般方法的方案。以40 GHz HEMT代工工艺参数为例，给出了仿真结果，说明了不同方案的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Distributed amplifiers with embedded signal shaping for multigigabit transmission systems

This paper discusses the use of distributed amplifiers as transversal filters for high bit rate pulse shaping/filtering applications. Two schemes demonstrating a general approach, obtained by optimising one or more transversal filter parameters are explored. Simulation results, based on the parameters of a commercially available 40 GHz HEMT foundry process, are presented to illustrate the practicability of the different schemes.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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