{"title":"一种2 ~ 18 GHz中功率砷化镓介面效应放大器的设计与性能","authors":"G. Basawapatna","doi":"10.1109/EUMA.1978.332547","DOIUrl":null,"url":null,"abstract":"This paper discusses the design and performance of a multi-stage wideband GaAs MESFET amplifier. The amplifier had a small signal gain of 12 to 20 dB in the frequency range of 2 to 18 GHz. The l-dB gain-compression point of the amplifier was 13 dBm and the saturated power output exceeded 16 dBm. The wideband matching techniques used and the trade-offs involved are discussed. Also discussed are the device parameters and their relationships to the performance of the amplifier.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"248 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Performance of a 2 to 18 GHz Medium Power Ga As Mesfet Amplifier\",\"authors\":\"G. Basawapatna\",\"doi\":\"10.1109/EUMA.1978.332547\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the design and performance of a multi-stage wideband GaAs MESFET amplifier. The amplifier had a small signal gain of 12 to 20 dB in the frequency range of 2 to 18 GHz. The l-dB gain-compression point of the amplifier was 13 dBm and the saturated power output exceeded 16 dBm. The wideband matching techniques used and the trade-offs involved are discussed. Also discussed are the device parameters and their relationships to the performance of the amplifier.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"248 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332547\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and Performance of a 2 to 18 GHz Medium Power Ga As Mesfet Amplifier
This paper discusses the design and performance of a multi-stage wideband GaAs MESFET amplifier. The amplifier had a small signal gain of 12 to 20 dB in the frequency range of 2 to 18 GHz. The l-dB gain-compression point of the amplifier was 13 dBm and the saturated power output exceeded 16 dBm. The wideband matching techniques used and the trade-offs involved are discussed. Also discussed are the device parameters and their relationships to the performance of the amplifier.
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