一种具有超低导通电阻的双通道常关SiC JFET器件

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240034

F. Udrea, A. Mihaila, S. J. Rashid, G. Amaratunga, Y. Takeuchi, M. Kataoka, R. K. Malhan

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引用次数: 3

摘要

在本文中，我们报告了一种具有双沟道的新型“全外延”1.2 kV正常关断JFET，以显着提高特定的导通状态电阻。该器件依赖于通道/栅极区域的n和p/sup +/条纹的连续。与标准单通道正常关断的JFET相比，导通电阻降低了30%。根据所考虑的结构，1.2 kV器件的特定导通状态电阻的单极值低于3m /spl ω /cm/sup 2/。

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A double channel normally-off SiC JFET device with ultra-low on-state resistance

In this paper we report a novel 'all-epitaxial' 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p/sup +/ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 m/spl Omega/cm/sup 2/.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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