采用准相位匹配级联二阶非线性效应的全光门开关:制造误差的影响

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2012-10-02 DOI:10.1109/NUSOD.2012.6316490

R. Oshige, Y. Osawa, Y. Fukuchi

{"title":"采用准相位匹配级联二阶非线性效应的全光门开关:制造误差的影响","authors":"R. Oshige, Y. Osawa, Y. Fukuchi","doi":"10.1109/NUSOD.2012.6316490","DOIUrl":null,"url":null,"abstract":"We numerically calculate characteristics of all-optical gate switches using the cascaded second-order nonlinear effect in quasi-phase matched lithium niobate waveguides. Small amount of the domain length error causes significant decrease of the switching efficiency.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-optical gate switches employing the quasi-phase matched cascaded second-order nonlinear effect: Effect of fabrication errors\",\"authors\":\"R. Oshige, Y. Osawa, Y. Fukuchi\",\"doi\":\"10.1109/NUSOD.2012.6316490\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We numerically calculate characteristics of all-optical gate switches using the cascaded second-order nonlinear effect in quasi-phase matched lithium niobate waveguides. Small amount of the domain length error causes significant decrease of the switching efficiency.\",\"PeriodicalId\":337826,\"journal\":{\"name\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2012.6316490\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2012.6316490","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用准相位匹配铌酸锂波导中的级联二阶非线性效应，对全光门开关的特性进行了数值计算。很小的域长度误差会导致切换效率的显著降低。

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All-optical gate switches employing the quasi-phase matched cascaded second-order nonlinear effect: Effect of fabrication errors

We numerically calculate characteristics of all-optical gate switches using the cascaded second-order nonlinear effect in quasi-phase matched lithium niobate waveguides. Small amount of the domain length error causes significant decrease of the switching efficiency.

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来源期刊

2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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