{"title":"铬亚层对硅P-I-N光电二极管响应性的影响","authors":"M. Kukurudziak, E. Maistruk","doi":"10.1117/12.2616170","DOIUrl":null,"url":null,"abstract":"The level of silicon p-i-n photodiodes responsivity depending on thickness of the chromium sublayer on the back side of the device crystal, which is deposited to improve adhesion of gold, was studied. Transmission spectra of the chromiumfilm at its different thicknesses were obtained. It was found that starting from the sublayer thickness of 17 nm and less, the transmittance changes by one percent, which does not lead to an increase in photoresponsivity with a further decrease in the thickness of chromium.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Influence of chromium sublayer on silicon P-I-N photodiodes responsivity\",\"authors\":\"M. Kukurudziak, E. Maistruk\",\"doi\":\"10.1117/12.2616170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The level of silicon p-i-n photodiodes responsivity depending on thickness of the chromium sublayer on the back side of the device crystal, which is deposited to improve adhesion of gold, was studied. Transmission spectra of the chromiumfilm at its different thicknesses were obtained. It was found that starting from the sublayer thickness of 17 nm and less, the transmittance changes by one percent, which does not lead to an increase in photoresponsivity with a further decrease in the thickness of chromium.\",\"PeriodicalId\":250235,\"journal\":{\"name\":\"International Conference on Correlation Optics\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Correlation Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2616170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Correlation Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2616170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of chromium sublayer on silicon P-I-N photodiodes responsivity
The level of silicon p-i-n photodiodes responsivity depending on thickness of the chromium sublayer on the back side of the device crystal, which is deposited to improve adhesion of gold, was studied. Transmission spectra of the chromiumfilm at its different thicknesses were obtained. It was found that starting from the sublayer thickness of 17 nm and less, the transmittance changes by one percent, which does not lead to an increase in photoresponsivity with a further decrease in the thickness of chromium.
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