DRAM介电体的基本标度定律

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869832

H. Reisinger, R. Stengl

{"title":"DRAM介电体的基本标度定律","authors":"H. Reisinger, R. Stengl","doi":"10.1109/ICCDCS.2000.869832","DOIUrl":null,"url":null,"abstract":"Dynamic random access memories (DRAM) demand an ever increasing density of storage capacitors. We show that increasing the dielectric constant K of the capacitor dielectric will not help to meet future requirements. This is because the amount of charge stored on a given area has an upper physical limit. In fact if the scaling of DRAM feature sizes and supply voltages will follow the SIA roadmap, a maximum K-value of 500 to 1000 must not be exceeded for future DRAM generations.","PeriodicalId":301003,"journal":{"name":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Fundamental scaling laws of DRAM dielectrics\",\"authors\":\"H. Reisinger, R. Stengl\",\"doi\":\"10.1109/ICCDCS.2000.869832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dynamic random access memories (DRAM) demand an ever increasing density of storage capacitors. We show that increasing the dielectric constant K of the capacitor dielectric will not help to meet future requirements. This is because the amount of charge stored on a given area has an upper physical limit. In fact if the scaling of DRAM feature sizes and supply voltages will follow the SIA roadmap, a maximum K-value of 500 to 1000 must not be exceeded for future DRAM generations.\",\"PeriodicalId\":301003,\"journal\":{\"name\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2000.869832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2000.869832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

动态随机存取存储器(DRAM)对存储电容器密度的要求越来越高。结果表明，增加电容器介质的介电常数K无助于满足未来的要求。这是因为存储在给定区域上的电荷量有一个物理上限。事实上，如果DRAM特征尺寸和电源电压的缩放将遵循SIA路线图，那么在未来的DRAM世代中，最大k值不得超过500到1000。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fundamental scaling laws of DRAM dielectrics

Dynamic random access memories (DRAM) demand an ever increasing density of storage capacitors. We show that increasing the dielectric constant K of the capacitor dielectric will not help to meet future requirements. This is because the amount of charge stored on a given area has an upper physical limit. In fact if the scaling of DRAM feature sizes and supply voltages will follow the SIA roadmap, a maximum K-value of 500 to 1000 must not be exceeded for future DRAM generations.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

自引率

0.00%

发文量