通过快速拉伸和快速冷却(FPFC)铸锭生长，结合正确安排0.18 /spl mu/m DRAM单元的后续热预算，提高保留时间

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934981

Kim Ilgweon, Kwon Jaesoon, Lee Kyosung, Kim Dongchan, Shin Jungho, Choy Junho, Kim Namsung, Yang Heesik, Cheon Youngil, Park Juseok, Kwon Woyup, Song Youngjin, Park Daeyoung, Kim Jibum

{"title":"通过快速拉伸和快速冷却(FPFC)铸锭生长，结合正确安排0.18 /spl mu/m DRAM单元的后续热预算，提高保留时间","authors":"Kim Ilgweon, Kwon Jaesoon, Lee Kyosung, Kim Dongchan, Shin Jungho, Choy Junho, Kim Namsung, Yang Heesik, Cheon Youngil, Park Juseok, Kwon Woyup, Song Youngjin, Park Daeyoung, Kim Jibum","doi":"10.1109/VLSIT.2001.934981","DOIUrl":null,"url":null,"abstract":"The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.","PeriodicalId":232773,"journal":{"name":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond\",\"authors\":\"Kim Ilgweon, Kwon Jaesoon, Lee Kyosung, Kim Dongchan, Shin Jungho, Choy Junho, Kim Namsung, Yang Heesik, Cheon Youngil, Park Juseok, Kwon Woyup, Song Youngjin, Park Daeyoung, Kim Jibum\",\"doi\":\"10.1109/VLSIT.2001.934981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.\",\"PeriodicalId\":232773,\"journal\":{\"name\":\"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2001.934981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2001.934981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

为了提高具有浅沟槽隔离的高密度DRAM的保留时间，研究了基于空位辅助体微缺陷形成的减少生长缺陷的剥蚀方案和减少由剥蚀热预算引起的STI应力的方法。在本文中，我们报告了采用低成本FPFC(快拉快冷)铸锭生长的剥蚀方案，并结合后续热预算的适当安排，从而大大改善了DRAM保留时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Retention time improvement by fast-pull and fast-cool (FPFC) ingot growing combined with proper arrangement of subsequent thermal budget for 0.18 /spl mu/m DRAM cell and beyond

The denudation scheme based on vacancy-assisted BMD (bulk micro defect) formation for reducing grown-in defects and the method of reducing STI-stress caused by denudation thermal budget was investigated to improve the retention time of high density DRAM with STI (shallow trench isolation). In this paper, we report the denudation scheme employing low-cost FPFC (fast-pull and fast-cool) ingot growth, combined with proper arrangement of subsequent thermal budget, resulting in excellent improvement of DRAM retention time.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

自引率

0.00%

发文量