A. Nakagawa, T. Matsudai, T. Matsuda, M. Yamaguchi, T. Ogura
{"title":"mosfet模式超薄晶片PTIGBTs在软开关中的应用理论与实验","authors":"A. Nakagawa, T. Matsudai, T. Matsuda, M. Yamaguchi, T. Ogura","doi":"10.1109/WCT.2004.239815","DOIUrl":null,"url":null,"abstract":"We have previously proposed and analyzed the MOSFET-mode operation of ultra-thin wafer PTIGBTs in (T. Matsudai et. al., Proc. of ISPSD'02, p.258). The present paper, for the first time, presents an analytical theory of MOSFET-mode operation, and shows that the safe operating area is determined by a mechanism similar to the second breakdown of npn bipolar transistors. The present paper also experimentally demonstrates, for the first time, that the MOSFET-mode IGBTs are strongly effective for soft switching applications. The developed MOSFET-mode 900 V 60 A thin wafer trench gate PTIGBTs have reduced turn-off loss by 55% at 125/spl deg/C, compared with the conventional (4th generation) soft switching PTIGBTs.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"MOSFET-mode ultra-thin wafer PTIGBTs for soft switching application $theory and experiments\",\"authors\":\"A. Nakagawa, T. Matsudai, T. Matsuda, M. Yamaguchi, T. Ogura\",\"doi\":\"10.1109/WCT.2004.239815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have previously proposed and analyzed the MOSFET-mode operation of ultra-thin wafer PTIGBTs in (T. Matsudai et. al., Proc. of ISPSD'02, p.258). The present paper, for the first time, presents an analytical theory of MOSFET-mode operation, and shows that the safe operating area is determined by a mechanism similar to the second breakdown of npn bipolar transistors. The present paper also experimentally demonstrates, for the first time, that the MOSFET-mode IGBTs are strongly effective for soft switching applications. The developed MOSFET-mode 900 V 60 A thin wafer trench gate PTIGBTs have reduced turn-off loss by 55% at 125/spl deg/C, compared with the conventional (4th generation) soft switching PTIGBTs.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
摘要
我们之前已经提出并分析了超薄晶片PTIGBTs的mosfet模式工作(T. Matsudai et. al.， Proc. of ISPSD'02, p.258)。本文首次提出了mosfet模式工作的解析理论，并表明安全工作区域是由类似于npn双极晶体管二次击穿的机制决定的。本文还首次通过实验证明了mosfet模式igbt在软开关应用中是非常有效的。与传统的(第四代)软开关PTIGBTs相比，开发的mosfet模式900 V 60a薄晶片沟槽栅极PTIGBTs在125/spl度/C时的关断损耗降低了55%。
MOSFET-mode ultra-thin wafer PTIGBTs for soft switching application $theory and experiments
We have previously proposed and analyzed the MOSFET-mode operation of ultra-thin wafer PTIGBTs in (T. Matsudai et. al., Proc. of ISPSD'02, p.258). The present paper, for the first time, presents an analytical theory of MOSFET-mode operation, and shows that the safe operating area is determined by a mechanism similar to the second breakdown of npn bipolar transistors. The present paper also experimentally demonstrates, for the first time, that the MOSFET-mode IGBTs are strongly effective for soft switching applications. The developed MOSFET-mode 900 V 60 A thin wafer trench gate PTIGBTs have reduced turn-off loss by 55% at 125/spl deg/C, compared with the conventional (4th generation) soft switching PTIGBTs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
