选择性注入诱导混合在v槽AlGaAs/GaAs耦合量子线上的应用

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791703

Xingquan Liu, Wei Lu, Xiaoshuang Chen, S. Shen, H. Tan, S. Yuan, C. Jagadish, M. Johnston, L. Dao, M. Gal, J. Zou, D. Cockayne

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引用次数: 0

摘要

在v型槽量子线结构中，采用选择性注入诱导混合的方法将量子线的光谱响应与量子阱的光谱响应分离。光致发光(PL)测量显示光谱响应的分离。

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Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire

Selective implantation induced intermixing was used to separate the spectral response of quantum wire from that of the quantum wells in V-grooved quantum wire structure. Photoluminescence (PL) measurement was accomplished to show the separation of the spectral response.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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