A. Kundu, Saunak Bhattacharya, Sourav Kumar, M. Kanjilal, M. Mukherjee
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引用次数: 0
摘要
本文研制了量子校正(QMC)水平掺杂Si/4H-SiC多层雪崩光传感器(APS)，并将其应用于生物医学领域。从300nm ~ 900nm波长区域的光电流、光响应率和量子效率等方面分析了所研制的光传感器的光电特性。通过将Si/4H-SiC多层结构加入器件的有源区，这些参数都得到了很大的改善。近年来，这种生物医学光传感器用于人体血液中抗体和病毒的鉴定的需求显著增加。通过与实验数据的比较，验证了新模型的有效性。设计的基于QMC模型的Si/4H-SiC多层雪崩光传感器的光电特性分析表明，光电流为~20μA，光响应率和量子效率分别为~0.65A/ w ~0.67。研究结果明确了该光传感器在可见光波段(300nm ~ 900nm)开发医疗器械的优越性。
Analysis the Photo-Electric Characteristics of Quantum Corrected Horizontally Doped Si/4H-SiC Multi-Layers Avalanche Photo Sensor for Application in Bio-Medical Region
In this paper, Quantum Corrected (QMC) horizontally doped Si/4H-SiC multi layers avalanche photo sensor (APS) has been developed for application in bio-medical domain. The photo electric characteristics of the developed photo sensor has been analysed in terms of photo current, photo responsivity and quantum efficiency in 300nm – 900nm wavelength region. These all parameters have been improved considerably by incorporating Si/4H-SiC multi layers structure into the active region of the devices. Recently demand of such bio-medical photo-sensors is increasing significantly for identification of anti-bodies and virus in human blood. The validity of newly developed model has been established by comparing the simulated result with the reported experimental data. The photo electrical characteristics analysis of the designed QMC model-based Si/4H-SiC multi layers avalanche photo sensor depict that the photo current is ~20μA whereas the photo responsivity and quantum efficiency are ~0.65A/Wand ~0.67 respectively. The results clearly establish the superiority of proposed photo-sensor for developing medical instruments in visible wavelength region (300nm – 900nm).
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