一种新型高速宽调谐控制电压范围的CMOS伪差分环压控振荡器

Saman Kamran, Noushin Ghaderi
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引用次数: 9

摘要

本文提出了一种基于Park-Kim环压控振荡器(Park-Kim ring VCO)的新型三级伪差动环压控振荡器,具有高速、宽调谐控制电压范围的特点。采用Hara有源电感的电感分流调峰技术,可获得较宽的带宽。在控制电压上增加一对带栅极的PMOS晶体管,以增加振荡频率和调节控制电压范围。通过最小化噪声电流对相位噪声有重要影响的信号过渡期来降低相位噪声。电路采用0.18µm CMOS技术进行仿真,电源电压为1.8V,功耗为8.3mW。采用该技术可实现3.1 GHz ~ 10.1 GHz宽调谐频率范围的压控振荡器。该环形压控振荡器的相位噪声测量值为- 113 dBc/Hz,偏移量为1mhz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel high speed CMOS pseudo-differential ring VCO with wide tuning control voltage range
In this paper a novel three-stage pseudo-differential ring voltage controlled oscillator (VCO) based on Park-Kim ring VCO with high speed and a wide tuning control voltage range is proposed. By using the inductive shunt peaking technique with Hara active inductors a wide bandwidth is obtained. A pair of PMOS transistors with gates connected to the controlled-voltage is added to increase the oscillation frequency and tuning control voltage range. The phase noise is also reduced by minimizing signal transition period in which noise current has critical impact on the phase noise. The circuit is simulated in 0.18 µm CMOS technology with supply voltage of 1.8V and power consumption of 8.3mW. A VCO with wide tuning frequency range from 3.1 GHz to 10.1 GHz is achieved by using this technique. The measured phase noise of this ring VCO are −113 dBc/Hz at a 1-MHz offset.
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