高线性和高效率堆叠fet毫米波功率放大器集成电路

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226212

T. Yoshimasu, Mengchu Fang, T. Sugiura

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引用次数: 0

摘要

本文对近年来报道的用于5G等微波和毫米波通信系统的CMOS功率放大器ic进行了总结和评述。叠置场效应管被广泛用于提高输出功率和解决低击穿电压问题。此外，本文还详细介绍了自适应偏置和负载电路，以提高功率放大器集成电路的线性度和回退效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High Linearity and High Efficiency Stacked-FET Millimeter-Wave Power Amplifier ICs

Recently reported CMOS power amplifier ICs for microwave and millimeter-wave communication systems such as 5G are summarized and reviewed in this paper. Stacked-FETs are widely utilized to increase the output power and to conquer low breakdown voltage issues. In addition, adaptive bias and load circuits are fully described to improve the linearity and back-off efficiency of the power amplifier ICs in this paper.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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