Production of ZnSxSe1-x zinc sulfoselenides by CVD method

A CVD-technique for production of bulk ZnSxSe1-x with homogeneous composition has been proposed. A comparative analysis of optical and structural characteristics of zinc sulfoselenides has been carried out prior to and after hot isostatic pressure (HIP). Solid solutions of ZnSxSe1-x zinc chalcogenides are wide gap semiconductors applied as the materials for optoelectronics, various photoelectric and optical devices. There is an interest to their application as an operating medium of solid-state lasers and in gradient optics. The method of chemical vapor deposition (CVD) is the most promising method for production of zinc chalcogenides with simultaneously high optical and strength characteristics; however, it happens to be impossible to manufacture the samples ofZnSxSe1-x with homogeneous composition in the reactors used for production of ZnS and ZnSe. Due to this fact the problem of production of zinc sulfoselenides with the given constant composition by CVD method is of vital importance. The goal of our paper is the development of technique for production of bulk samples of zinc sulfoselenides with homogeneous composition by CVD method as well as the investigation of the effect of hot isostatic pressure (HIP) on structure and optical properties of ZnSxSe1-x.