具有介电多层反射器的高效氮化硅光栅耦合器

2017 22nd Microoptics Conference (MOC) Pub Date : 2017-11-19 DOI:10.23919/MOC.2017.8244493

Jianxun Hong, S. Yokoyama

{"title":"具有介电多层反射器的高效氮化硅光栅耦合器","authors":"Jianxun Hong, S. Yokoyama","doi":"10.23919/MOC.2017.8244493","DOIUrl":null,"url":null,"abstract":"A highly efficient grating coupler with a dielectric multilayer reflector for silicon nitride photonic integrated circuits was proposed. Design, fabrication and optical characterization were presented. The peak coupling efficiency and 3 dB bandwidth are −4.5 dB and 68.0 nm, respectively. The fabrication process is CMOS-compatible with only one etching step.","PeriodicalId":123743,"journal":{"name":"2017 22nd Microoptics Conference (MOC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Efficient silicon nitride grating coupler with a dielectric multilayer reflector\",\"authors\":\"Jianxun Hong, S. Yokoyama\",\"doi\":\"10.23919/MOC.2017.8244493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly efficient grating coupler with a dielectric multilayer reflector for silicon nitride photonic integrated circuits was proposed. Design, fabrication and optical characterization were presented. The peak coupling efficiency and 3 dB bandwidth are −4.5 dB and 68.0 nm, respectively. The fabrication process is CMOS-compatible with only one etching step.\",\"PeriodicalId\":123743,\"journal\":{\"name\":\"2017 22nd Microoptics Conference (MOC)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 22nd Microoptics Conference (MOC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MOC.2017.8244493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 22nd Microoptics Conference (MOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MOC.2017.8244493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种用于氮化硅光子集成电路的具有多层介质反射器的高效光栅耦合器。介绍了其设计、制造和光学特性。峰值耦合效率为- 4.5 dB, 3db带宽为68.0 nm。制造过程是cmos兼容，只有一个蚀刻步骤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Efficient silicon nitride grating coupler with a dielectric multilayer reflector

A highly efficient grating coupler with a dielectric multilayer reflector for silicon nitride photonic integrated circuits was proposed. Design, fabrication and optical characterization were presented. The peak coupling efficiency and 3 dB bandwidth are −4.5 dB and 68.0 nm, respectively. The fabrication process is CMOS-compatible with only one etching step.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 22nd Microoptics Conference (MOC)

自引率

0.00%

发文量