不同Si/sub - 1-x/Ge/sub -x/ n-Si/Al层取向Al/Si/sub -x/ sub -x/ n-Si/Al异质二极管的QD几何和电学特性

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416659

V. Ligatchev, T. Wong

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摘要

实验研究了x = 0.1 ~ 0.3时Al/Si/sub - 1-x/Ge/sub -x/ n-Si/Al结构和Si/sub - 1-x/Ge/sub -x层不同晶向的室温I-V和C-V曲线的具体特征，并将其归因于量子约束效应的影响。

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QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers

Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.

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First IEEE International Conference on Group IV Photonics, 2004.

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