基于RAD-THERM TCAD子系统的BiCMOS LSI元件辐射和温度诱导故障建模与仿真

2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS) Pub Date : 2019-04-24 DOI:10.1109/DDECS.2019.8724651

K. Petrosyants, M. Kozhukhov, Dmitry Popov

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引用次数: 1

摘要

基于Sentaurus Synopsys平台开发了一种特殊的RAD-THERM版本的TCAD子系统，考虑了不同类型的辐照(伽马射线、中子、电子、质子、单事件)和外部/内部加热效应，并进行了验证，以预测自然实验结果，帮助设计人员进行可靠性保证。对作为BiCMOS LSI组件的Si/SiGe BJTs/HBTs和bulk/SOI mosfet进行了辐射和温度诱导故障的建模和仿真。讨论了器件参数退化的原因。

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Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI’s Components using RAD-THERM TCAD Subsystem

A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled and simulated for Si/SiGe BJTs/HBTs and bulk/SOI MOSFETs as BiCMOS LSI’s components. The causes of device parameter degradation were discussed.

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2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)

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