探索低温对钴和钌金属化的好处

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154717

D. Tierno, I. Ciofi, O. Pedreira, B. Parvais, K. Croes

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引用次数: 0

摘要

在低温(5K-300K)条件下，利用imec电阻率模型和宽度在14 ~ 64 nm之间的实际互连，对Co和Ru金属化与Cu金属化进行了基准测试。我们观察到电阻随着温度的降低而降低，其中Ru和Co由于其较大的电阻温度系数(TCR)而表现出最大的下降(~50%)。对于20nm宽的谱线，Ru和Co的计算TCR为~2000 ppm/°C，而Cu的TCR为~1000 ppm/°C。然而，我们发现只有Ru优于Cu，对于26nm宽的线，在100K时发生交叉，可能会提高系统在低温下工作的性能。

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Exploring the Benefits of Cryogenic Temperatures for Co and Ru Metallizations

We benchmarked Co and Ru metallizations against Cu at cryogenic temperatures (5K-300K) by using imec resistivity model and actual interconnects, with widths between 14 and 64 nm. We observed a decrease in resistance as temperature decreases, with Ru and Co exhibiting the largest drop (~50%) due to their larger Temperature Coefficients of Resistance (TCR). For 20nm-wide lines, the calculated TCR was ~2000 ppm/°C for Ru and Co compared to ~1000 ppm/°C for Cu. However, we show that only Ru outperforms Cu, with the cross-over occurring at 100K for 26nm-wide lines, potentially boosting the performances of systems operating at cryogenic temperatures.

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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