一种新型晶体管串联偏置和功率组合的功率放大器拓扑结构

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185992

M. Shifrin, Y. Ayasli, P. Katzin

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引用次数: 40

摘要

在用GaAs mesfet实现的微波单片集成电路(MMIC)中演示了功率放大器的拓扑结构。这种拓扑结构克服了传统的功率晶体管单元并行方法的几个限制。在新的拓扑结构中，单元格是并联和串联组合的。其优点包括更高的输入和输出阻抗，宽带功率匹配级间网络，以及降低直流电流时的高电压偏置。给出了用该技术实现的MMIC和混合功率放大器的测量结果。

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A new power amplifier topology with series biasing and power combining of transistors

A power amplifier topology was demonstrated in a microwave monolithic integrated circuit (MMIC) implementation with GaAs MESFETs. This topology overcomes several limitations of the traditional approach of paralleling of power transistor unit cells. In the new topology, unit cells are both parallel and series combined. The benefits include higher input and output impedances, broadband power matched interstage networks, and high voltage biasing at reduced DC current. Measured results on a MMIC and a hybrid power amplifier implemented with this technique are presented.<>

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IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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