辐射硬电路设计:触发器和SRAM

G. Kaushal, S. Rathod, C. Raghuram, S. Dasgupta
{"title":"辐射硬电路设计:触发器和SRAM","authors":"G. Kaushal, S. Rathod, C. Raghuram, S. Dasgupta","doi":"10.1049/pbcs073g_ch12","DOIUrl":null,"url":null,"abstract":"As the transistor size scales down exponentially to nanometric dimensions, the susceptibility of electronic circuits to radiation increases drastically. Protection against the radiation is important in the field of biomedical, aerospace, communication and computing. Flip-flops (FFs) and static random access memories (SRAMs) are used to store the data in many critical applications where their performance must be resilient to radiation exposures to guarantee reliability. Therefore development of resilient FFs and SRAM are the challenging and demanding problems. In this chapter, different approaches are analysed to design these radiation hard circuits.","PeriodicalId":417544,"journal":{"name":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Radiation hard circuit design: flip-flop and SRAM\",\"authors\":\"G. Kaushal, S. Rathod, C. Raghuram, S. Dasgupta\",\"doi\":\"10.1049/pbcs073g_ch12\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the transistor size scales down exponentially to nanometric dimensions, the susceptibility of electronic circuits to radiation increases drastically. Protection against the radiation is important in the field of biomedical, aerospace, communication and computing. Flip-flops (FFs) and static random access memories (SRAMs) are used to store the data in many critical applications where their performance must be resilient to radiation exposures to guarantee reliability. Therefore development of resilient FFs and SRAM are the challenging and demanding problems. In this chapter, different approaches are analysed to design these radiation hard circuits.\",\"PeriodicalId\":417544,\"journal\":{\"name\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/pbcs073g_ch12\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"VLSI and Post-CMOS Electronics. Volume 2: Devices, circuits and interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/pbcs073g_ch12","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

当晶体管尺寸呈指数级缩小到纳米尺寸时,电子电路对辐射的敏感性急剧增加。辐射防护在生物医学、航空航天、通信和计算领域具有重要意义。在许多关键应用中,触发器(FFs)和静态随机存取存储器(sram)用于存储数据,这些应用的性能必须能够适应辐射暴露以保证可靠性。因此,弹性FFs和SRAM的开发是具有挑战性和高要求的问题。在本章中,分析了设计这些辐射硬电路的不同方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation hard circuit design: flip-flop and SRAM
As the transistor size scales down exponentially to nanometric dimensions, the susceptibility of electronic circuits to radiation increases drastically. Protection against the radiation is important in the field of biomedical, aerospace, communication and computing. Flip-flops (FFs) and static random access memories (SRAMs) are used to store the data in many critical applications where their performance must be resilient to radiation exposures to guarantee reliability. Therefore development of resilient FFs and SRAM are the challenging and demanding problems. In this chapter, different approaches are analysed to design these radiation hard circuits.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信