直流-直流转换中频率上升对半导体的影响

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting Pub Date : 1991-09-28 DOI:10.1109/IAS.1991.178370

J. Roudet, J. Ferrieux, J. Pérard

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引用次数: 1

摘要

对于额定功率在1到50千瓦之间的情况，可以使用三种中高频开关技术:双极晶体管、绝缘栅双极晶体管(IGBT)和MOSFET。理论研究已在一个3kw的样机上得到验证，结论可以推广到更重要的功率变换器上。电力电子设计人员必须选择换相方式和开关技术，以获得最佳性能(频率、效率等)。这项工作的目的是帮助设计师做出这样的选择。

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Influence of rising frequency on semiconductors in DC-DC conversion

For power ratings between one and fifty kilowatts, three switch technologies in medium and high frequency can be used: bipolar transistors, insulated gate bipolar transistor (IGBT), and MOSFET. A theoretical study has been verified on a 3 kW prototype, and the conclusions could be extended for more important power converters. The designer in power electronics must choose the commutation mode and the technology of the switch to obtain the best possible performances (frequency, efficiency, etc.). The aim of this work is to help the designer to make this choice.<>

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Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting

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