{"title":"14ghz, 22dbm系列Doherty功率放大器在45nm CMOS SOI","authors":"Cooper S. Levy, Voravit Vorapipat, J. Buckwalter","doi":"10.1109/CSICS.2016.7751012","DOIUrl":null,"url":null,"abstract":"This paper presents a new series Doherty power amplifier (SDPA) with a single-ended output that eliminates transformers in the output matching network. The series power combining architecture offers higher output power in scaled CMOS compared to conventional Doherty PAs and is amenable to integration at microwave and millimeter wave bands. The SDPA is implemented in 45-nm CMOS SOI and achieves a peak output power of 22-dBm and PAE of 24% and 20% at peak and 6 dB back-off powers, respectively.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 14-GHz, 22-dBm Series Doherty Power Amplifier in 45-nm CMOS SOI\",\"authors\":\"Cooper S. Levy, Voravit Vorapipat, J. Buckwalter\",\"doi\":\"10.1109/CSICS.2016.7751012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new series Doherty power amplifier (SDPA) with a single-ended output that eliminates transformers in the output matching network. The series power combining architecture offers higher output power in scaled CMOS compared to conventional Doherty PAs and is amenable to integration at microwave and millimeter wave bands. The SDPA is implemented in 45-nm CMOS SOI and achieves a peak output power of 22-dBm and PAE of 24% and 20% at peak and 6 dB back-off powers, respectively.\",\"PeriodicalId\":183218,\"journal\":{\"name\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2016.7751012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 14-GHz, 22-dBm Series Doherty Power Amplifier in 45-nm CMOS SOI
This paper presents a new series Doherty power amplifier (SDPA) with a single-ended output that eliminates transformers in the output matching network. The series power combining architecture offers higher output power in scaled CMOS compared to conventional Doherty PAs and is amenable to integration at microwave and millimeter wave bands. The SDPA is implemented in 45-nm CMOS SOI and achieves a peak output power of 22-dBm and PAE of 24% and 20% at peak and 6 dB back-off powers, respectively.