N. Deltimple, Victor Dupuy, E. Kerhervé, B. Mallet-Guy, Claude Auric, J. Plaze, Y. Mancuso, P. Garrec
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A compact fully integrated GaN high power amplifier for C-X band applications
A fully integrated two-stage power amplifier is described for 4-6 W saturated output power over a 4GHz to 11GHz frequency range. The PA topology is chosen to obtain the best bandwidth, output power and Power Added Efficiency (PAE). The output stage is composed of two unit power cells and the power recombination is made by a stacked balun. The differential input of the power stage is provided by the first stage which realized a single to differentiel conversion. The PA is designed and fabricated in a 0.25μm GaN integrated technology from UMS foundry. Both simulations and measurement results are presented. This GaN PA provides 38 dBm of maximum saturated power and 18% to 31% peak PAE in the 4GHz to 11GHz frequency range.
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