集成电路仿真中的BSIM4和MOSFET建模

Weidong Liu, C. Hu
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引用次数: 57

摘要

本书介绍了用于集成电路仿真和设计的先进MOSFET建模艺术。它提供了与集成电路运行有关的MOS晶体管中所有电、机械和热效应的基本数学和物理分析。特别强调的是BSIM模型如何演变成电路仿真和CMOS技术开发的第一个行业标准SPICE MOSFET模型。讨论涵盖了如何实现MOSFET模型或半导体器件模型的理论和方法,使其具有鲁棒性和效率,将器件物理理论转化为具有生产价值的SPICE仿真模型。特别注意的是MOSFET表征和模型参数提取方法,使得这本书特别有用的那些感兴趣或已经从事半导体器件领域的工作,紧凑的建模SPICE仿真和集成电路设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BSIM4 and MOSFET Modeling For IC Simulation
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
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