金属合金表面碳纳米管柱阵列的场发射特性

2008 IEEE International Vacuum Electronics Conference Pub Date : 2008-04-22 DOI:10.1109/IVELEC.2008.4556390

J. Killian, D. Niemann, N. Zuckerman, J. Silan, B. Ribaya, M. Rahman, M. Meyyappan, C. Nguyen

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引用次数: 1

摘要

采用传统的光刻工艺制备了用于冷场发射的碳纳米管柱阵列，研究了碳纳米管柱阵列的几何形状，并量化了柱高度对冷场发射的影响。我们的CPA样品在低于6V/mum的电场下实现了低至0.9 V/mum的导通场和10 mA/cm2的稳定电流密度。

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Field emission properties of carbon nanotube pillar arrays patterned directly on metal alloy surfaces

Carbon nanotube pillar arrays (CPAs) for cold field emission were fabricated using a conventional photolithography process, and the geometry of these arrays was studied and the effect of pillar height on field emission was quantified. Our CPA samples achieved turn-on fields as low as 0.9 V/mum and stable current densities of 10 mA/cm2 at applied field lower than 6V/mum.

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2008 IEEE International Vacuum Electronics Conference

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